Imec, Belgian kev tshawb fawb thiab kev tsim kho tshiab, tau nthuav tawm thawj GaAs-based heterojunction bipolar transistor (HBT) cov khoom siv ntawm 300mm Si, thiab CMOS-tshaj GaN-raws li cov khoom siv ntawm 200mm Si rau mm-yoj daim ntawv thov.
Cov txiaj ntsig tau pom qhov muaj peev xwm ntawm ob qho tib si III-V-on-Si thiab GaN-on-Si raws li CMOS-tshaj thev naus laus zis rau kev ua kom RF pem hauv ntej-kawg modules rau dhau 5G daim ntawv thov.Lawv tau nthuav tawm nyob rau xyoo tas los lub rooj sib tham IEDM (Lub Kaum Ob Hlis 2019, San Francisco) thiab yuav nthuav tawm hauv cov lus qhia tseem ceeb ntawm Imec's Michael Peeters txog kev sib txuas lus ntawm cov neeg siv khoom tshaj li broadband ntawm IEEE CCNC (10-13 Lub Ib Hlis 2020, Las Vegas).
Hauv kev sib txuas lus wireless, nrog 5G raws li tiam tom ntej, muaj kev thawb mus rau kev ua haujlwm siab dua, txav los ntawm cov kab sib txuas hauv sub-6GHz mus rau mm-wave bands (thiab dhau ntawd).Kev taw qhia ntawm cov mm-wave bands muaj qhov cuam tshuam loj rau tag nrho 5G network infrastructure thiab cov khoom siv txawb.Rau cov kev pabcuam hauv xovtooj thiab Fixed Wireless Access (FWA), qhov no txhais mus rau hauv kev nce ntxiv hauv pem hauv ntej-kawg modules uas xa cov teeb liab mus rau thiab los ntawm tus kav hlau txais xov.
Yuav kom muaj peev xwm ua haujlwm ntawm mm-yoj zaus, RF pem hauv ntej-kawg modules yuav tsum tau ua ke nrog kev kub ceev (ua kom cov ntaub ntawv-tus nqi ntawm 10Gbps thiab tshaj) nrog lub zog tso zis siab.Tsis tas li ntawd, lawv cov kev siv hauv cov xov tooj ntawm tes ua rau muaj kev xav tau siab ntawm lawv cov qauv tsim thiab lub zog ua haujlwm.Tshaj li 5G, cov kev xav tau no tsis tuaj yeem ua tiav nrog niaj hnub no cov RF siab tshaj plaws pem hauv ntej-kawg modules uas feem ntau vam khom ntau yam thev naus laus zis ntawm lwm tus GaAs-based HBTs rau lub zog amplifiers - loj hlob ntawm me me thiab kim GaAs substrates.
"Yuav ua kom cov tiam tom ntej RF pem hauv ntej-kawg modules dhau 5G, Imec tshawb nrhiav CMOS-tshaj III-V-on-Si thev naus laus zis", hais tias Nadine Collaert, tus thawj coj ntawm Imec."Imec tab tom saib mus rau hauv kev sib koom ua ke ntawm cov khoom hauv pem hauv ntej-kawg (xws li lub zog amplifiers thiab keyboards) nrog rau lwm yam CMOS-raws li circuits (xws li kev tswj circuitry lossis transceiver thev naus laus zis), kom txo tau tus nqi thiab cov qauv tsim, thiab ua kom cov hybrid circuit topologies tshiab. los hais txog kev ua haujlwm thiab kev ua haujlwm.Imec tab tom tshawb nrhiav ob txoj kev sib txawv: (1) InP ntawm Si, tsom mm-yoj thiab zaus tshaj 100GHz (kev siv 6G yav tom ntej) thiab (2) GaN-raws li cov khoom siv ntawm Si, tsom (hauv thawj theem) qis mm-yoj bands thiab hais txog daim ntawv thov nyob rau hauv kev xav tau ntawm lub zog siab ceev.Rau ob txoj kev, tam sim no peb tau txais thawj cov khoom siv ua haujlwm nrog cov yam ntxwv ua tau zoo, thiab peb tau txheeb xyuas txoj hauv kev los txhim kho lawv cov kev ua haujlwm ntau zaus. "
Functional GaAs/InGaP HBT cov khoom loj hlob ntawm 300mm Si tau pom tias yog thawj kauj ruam ntawm kev ua haujlwm ntawm InP-raws li cov khoom siv.Ib qho khoom siv tsis xws luag nrog qis dua 3x106cm-2 threading dislocation ceev tau txais los ntawm kev siv Imec tus txheej txheem III-V nano-ridge engineering (NRE).Cov cuab yeej ua tau zoo dua li cov khoom siv siv, nrog GaAs fabricated ntawm Si substrates nrog strain relaxed buffer (SRB) txheej.Hauv cov kauj ruam tom ntej, kev txav mus los ntau dua InP-raws li cov khoom siv (HBT thiab HEMT) yuav raug tshawb nrhiav.
Cov duab saum toj no qhia txog NRE txoj hauv kev rau hybrid III-V / CMOS kev koom ua ke ntawm 300mm Si: (a) nano-trench tsim;tsis xws luag yog daig nyob rau hauv lub nqaim trench cheeb tsam;(b) HBT pawg kev loj hlob siv NRE thiab (c) cov kev xaiv sib txawv rau HBT kev sib koom ua ke.
Ntxiv mus, CMOS-tshaj GaN / AlGaN-raws li cov khoom siv ntawm 200mm Si tau tsim los sib piv peb cov cuab yeej sib txawv - HEMTs, MOSFETs thiab MISHEMTs.Nws tau pom tias MISHEMT cov cuab yeej ua tau zoo tshaj lwm yam khoom siv hauv cov ntsiab lus ntawm cov cuab yeej scalability thiab suab nrov ua haujlwm rau kev ua haujlwm siab.Peak txiav tawm zaus ntawm fT / fmax nyob ib ncig ntawm 50/40 tau txais rau 300nm rooj vag ntev, uas yog nyob rau hauv txoj kab nrog GaN-on-SiC cov khoom siv.Dhau li ntawm qhov kev ntsuas qhov ntev ntxiv, thawj cov txiaj ntsig nrog AlInN yog cov khoom siv thaiv kev qhia lub peev xwm los txhim kho qhov kev ua tau zoo, thiab yog li ntawd, nce kev khiav hauj lwm zaus ntawm lub cuab yeej mus rau qhov yuav tsum tau mm-wave bands.
Post lub sij hawm: 23-03-21