Epitaxial (EPI) Silicon Wafer

Kev piav qhia

Epitaxial Silicon Waferlos yog EPI Silicon Wafer, yog ib tug wafer ntawm semiconducting siv lead ua txheej tso rau hauv lub polished crystal nto ntawm silicon substrate los ntawm epitaxial loj hlob.Cov txheej txheem epitaxial yuav yog cov khoom siv tib yam li cov substrate los ntawm homogeneous epitaxial kev loj hlob, los yog ib txheej kab txawv nrog cov kev xav tau zoo los ntawm heterogeneous epitaxial kev loj hlob, uas tau txais kev loj hlob ntawm epitaxial technology suav nrog cov tshuaj vapor deposition CVD, kua theem epitaxy LPE, nrog rau molecular beam. epitaxy MBE kom ua tiav qhov zoo tshaj plaws ntawm qhov tsis xws luag thiab qhov zoo ntawm qhov roughness.Silicon Epitaxial Wafers feem ntau yog siv rau hauv kev tsim cov khoom siv hluav taws xob siab tshaj plaws, cov khoom siv semiconductor sib xyaw ua ke ICs, cov khoom siv hluav taws xob thiab cov khoom siv hluav taws xob, kuj siv rau cov khoom siv ntawm diode thiab transistor lossis substrate rau IC xws li hom bipolar, MOS thiab BiCMOS li.Tsis tas li ntawd, ntau txheej epitaxial thiab tuab zaj duab xis EPI silicon wafers feem ntau siv hauv microelectronics, photonics thiab photovoltaics daim ntawv thov.

Kev xa khoom

Epitaxial Silicon Wafers los yog EPI Silicon Wafer ntawm Western Minmetals (SC) Corporation tuaj yeem muaj qhov loj ntawm 4, 5 thiab 6 nti (100mm, 125mm, 150mm inch), nrog kev taw qhia <100>, <111>, epilayer resistivity ntawm <1ohm -cm los yog mus txog 150ohm-cm, thiab epilayer thickness ntawm <1um los yog mus txog 150um, kom txaus siab rau ntau yam kev cai nyob rau hauv nto tiav ntawm etched los yog LTO kev kho mob, packed nyob rau hauv cassette nrog carton box sab nraum, los yog raws li customized specification rau lub zoo meej tov. .

Nug tam sim no

Paub meej

Cim npe

Technical Specification

Epi Silicon Wafer

Epitaxial Silicon Waferslos yog EPI Silicon Wafer ntawm Western Minmetals (SC) Corporation tuaj yeem muaj qhov loj ntawm 4, 5 thiab 6 nti (100mm, 125mm, 150mm txoj kab uas hla), nrog kev taw qhia <100>, <111>, epilayer resistivity ntawm <1ohm-cm los yog mus txog 150ohm-cm, thiab epilayer thickness ntawm <1um los yog mus txog 150um, kom txaus siab rau ntau yam kev cai nyob rau hauv nto tiav ntawm etched los yog LTO kev kho mob, packed nyob rau hauv cassette nrog thawv thawv sab nraum, los yog raws li customized specification rau lub zoo meej tov.

Cim	Si
Atomic Number	14
Atomic hnyav	28.09 Nws
Qeb Element	Metalloid
Pawg, Lub Sijhawm, Thaiv	14, 3, ib
Crystal qauv	Pob zeb diamond
Xim	Tsaus grey
Melting Point	1414 ° C, 1687.15 K
Boiling Point	3265 ° C, 3538.15 K
Qhov ceev ntawm 300K	2.329 g / cm3³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Nr	7440-21-3 : kuv
EC Number	231-130-8 : kuv

Tsis muaj.	Cov khoom	Txheem Specification
1	Cov yam ntxwv dav dav
1-1	Loj	4"	5"	6"
1-2	Txoj kab uas hla mm	100 ± 0.5	125 ± 0.5	150 ± 0.5
1-3	Kev taw qhia	<100>, <111>	<100>, <111>	<100>, <111>
2	Epitaxial Layer yam ntxwv
2-1	Txoj Kev Loj Hlob	CVD	CVD	CVD
2-2	Hom conductivity	P lossis P +, N / lossis N +	P lossis P +, N / lossis N +	P lossis P +, N / lossis N +
2-3	Thickness μm	2.5-120 Nws	2.5-120 Nws	2.5-120 Nws
2-4	Thickness Uniformity	≤ 3%	≤ 3%	≤ 3%
2-5	Resistant Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤ 3%	≤ 5%	-
2-7	Dislocation cm-2	<10	<10	<10
2-8	Nto Zoo	Tsis muaj nti, haze lossis txiv kab ntxwv tev, thiab lwm yam.
3	Kov Substrate yam ntxwv
3-1	Txoj Kev Loj Hlob	CZ	CZ	CZ
3-2	Hom conductivity	P/N	P/N	P/N
3-3	Thickness μm	525-675 : kuv	525-675 : kuv	525-675 : kuv
3-4	Thickness Uniformity max	3%	3%	3%
3-5	Resistant Ω-cm	Raws li xav tau	Raws li xav tau	Raws li xav tau
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TVV max	10	10	10
3-8	Taub μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Ntug Profile	Rounded	Rounded	Rounded
3-12	Nto Zoo	Tsis muaj nti, haze lossis txiv kab ntxwv tev, thiab lwm yam.
3-13	Back Side Finish	Etched lossis LTO (5000 ± 500Å)
4	Ntim	Cassette sab hauv, thawv thawv sab nraum.

Silicon Epitaxial WafersFeem ntau yog siv rau hauv kev tsim cov khoom siv hluav taws xob siab tshaj plaws, kev sib xyaw ua ke ntawm cov khoom siv semiconductor ICs, cov khoom siv hluav taws xob thiab cov khoom siv hluav taws xob, kuj siv rau lub caij ntawm diode thiab transistor lossis substrate rau IC xws li hom bipolar, MOS thiab BiCMOS li.Tsis tas li ntawd, ntau txheej epitaxial thiab tuab zaj duab xis EPI silicon wafers feem ntau siv hauv microelectronics, photonics thiab photovoltaics daim ntawv thov.