Gallium Phosphide GAP

Kev piav qhia

Gallium Phosphide GaP, ib qho tseem ceeb ntawm cov khoom siv hluav taws xob tshwj xeeb ntawm cov khoom siv hluav taws xob zoo li lwm cov khoom siv III-V, crystallizes nyob rau hauv lub thermodynamically ruaj khov cubic ZB qauv, yog ib tug txiv kab ntxwv-daj semitransparent siv lead ua khoom siv nrog ib tug indirect band sib txawv ntawm 2.26 eV (300K), uas yog synthesized los ntawm 6N 7N siab purity gallium thiab phosphorus, thiab loj hlob mus rau hauv ib qho siv lead ua los ntawm Liquid Encapsulated Czochralski (LEC) cov txheej txheem.Gallium Phosphide siv lead ua yog doped sulfur los yog tellurium kom tau n-hom semiconductor, thiab zinc doped li p-type conductivity rau ntxiv fabricating rau hauv qhov xav tau wafer, uas muaj kev siv hauv optical system, hluav taws xob thiab lwm yam khoom siv optoelectronics.Ib leeg Crystal GaP wafer tuaj yeem npaj Epi-npaj rau koj daim ntawv thov LPE, MOCVD thiab MBE epitaxial.Zoo siab ib leeg siv lead ua Gallium phosphide GaP wafer p-type, n-type lossis undoped conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem muaj qhov loj ntawm 2 "thiab 3" (50mm, 75mm inch), orientation <100>, <111 > nrog nto tiav ntawm as-txiav, polished lossis epi-npaj txheej txheem.

Daim ntawv thov

Nrog qis tam sim no thiab kev ua haujlwm siab hauv lub teeb pom kev zoo, Gallium phosphide GaP wafer yog tsim rau cov khoom siv kho qhov muag xws li cov nqi qis liab, txiv kab ntxwv, thiab ntsuab lub teeb-emitting diodes (LEDs) thiab backlight ntawm daj thiab ntsuab LCD thiab lwm yam thiab LED chips raug tsim nrog tsawg mus rau nruab nrab brightness, GaP kuj tau txais dav raws li lub hauv paus substrate rau infrared sensors thiab xyuas lub koob yees duab raug tsim.

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Technical Specification

Gallium Phosphide GAP

Zoo siab ib leeg siv lead ua Gallium Phosphide GaP wafer los yog substrate p-type, n-type lossis undoped conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem muab rau hauv qhov loj ntawm 2 "thiab 3" (50mm, 75mm) inch, orientation <100> , <111> nrog nto tiav ntawm as-txiav, lapped, etched, polished, epi-npaj ua tiav nyob rau hauv ib lub wafer ntim ntim rau hauv aluminium composite hnab los yog raws li customized specification rau lub zoo meej tov.

Tsis muaj.	Cov khoom	Txheem Specification
1	GAP Size	2"
2	Txoj kab uas hla mm	50.8 ± 0.5
3	Txoj Kev Loj Hlob	LEC
4	Hom conductivity	P-type / Zn-doped, N-type / (S, Si, Te)-doped, Un-doped
5	Kev taw qhia	<1 11> ± 0.5°
6	Thickness μm	(300-400) ± 20
7	Resistant Ω-cm	0.003-0.3 hli
8	Orientation Flat (OF) mm	16 ± 1
9	Identification Flat (IF) mm	8 ± 1
10	Hall Mobility cm2/Vs min	100
11	Carrier Concentration cm^-3	(2-20) E17
12	Dislocation ntom cm^-2max	2.00 Nws + 05
13	Nto tiav	P/E, P/P
14	Ntim	Ib lub wafer ntim ntim rau hauv lub hnab ntim khoom txhuas, thawv thawv sab nraud

Linear Formula	GaP
Molecular Luj	100.7 Nws
Crystal qauv	Zinc sib tov
Kev tshwm sim	Txiv kab ntxwv khov
Melting Point	N/A
Boiling Point	N/A
Qhov ceev ntawm 300K	4.14 g / cm²³
Zog Gap	2, 26 eV
Intrinsic resistivity	N/A
CAS Nr	12063-98-8
EC Number	235-057-2 : kuv

Gallium Phosphide GaP Wafer, nrog tsawg tam sim no thiab siab efficiency nyob rau hauv lub teeb emitting, yog haum rau optical zaub systems raws li tus nqi qis liab, txiv kab ntxwv, thiab ntsuab lub teeb-emitting diodes (LEDs) thiab backlight ntawm daj thiab ntsuab LCD thiab lwm yam thiab LED chips manufacturing nrog tsawg mus rau nruab nrab. brightness, GaP kuj tau txais yuav dav raws li qhov yooj yim substrate rau infrared sensors thiab xyuas lub koob yees duab raug tsim.