Gallium Antimonide GaSb

Kev piav qhia

Gallium Antimonide GaSb, ib lub semiconductor ntawm pawg III-V tebchaw nrog zinc-blende lattice qauv, yog synthesized los ntawm 6N 7N siab purity gallium thiab antimony ntsiab, thiab zus rau siv lead ua los ntawm LEC txoj kev los ntawm directionally khov polycrystalline ingot los yog VGF txoj kev nrog EPD <1000cm^-3.GaSb wafer tuaj yeem muab hlais rau hauv thiab tsim tom qab los ntawm ib qho crystalline ingot nrog lub siab sib xws ntawm cov hluav taws xob tsis zoo, cov qauv sib txawv thiab cov lattice tsis tu ncua, thiab qhov tsis xws luag, qhov ntsuas siab tshaj plaws ntawm cov khoom tsis yog hlau.GaSb tuaj yeem ua tiav nrog kev xaiv dav hauv qhov tseeb lossis tawm kev taw qhia, qis lossis siab doped concentration, zoo nto tiav thiab rau MBE lossis MOCVD epitaxial kev loj hlob.Gallium Antimonide substrate yog siv nyob rau hauv cov feem ntau txiav-ntev yees duab-optic thiab optoelectronic daim ntaub ntawv xws li fabrications ntawm yees duab ntes, infrared detectors nrog lub neej ntev, siab rhiab heev thiab kev ntseeg, photoresist tivthaiv, infrared LEDs thiab lasers, transistors, thermal photovoltaic cell. thiab thermo-photovoltaic systems.

Kev xa khoom

Gallium Antimonide GaSb ntawm Western Minmetals (SC) Corporation tuaj yeem muab nrog n-type, p-type thiab undoped semi-insulating conductivity nyob rau hauv qhov loj ntawm 2 "3" thiab 4" (50mm, 75mm, 100mm) txoj kab uas hla, orientation <111> los yog <100>, thiab nrog wafer nto tiav ntawm li-txiav, etched, polished los yog zoo epitaxy npaj tiav.Tag nrho cov hlais yog ib tus zuj zus laser scribed rau tus kheej.Lub caij no, polycrystalline gallium antimonide GaSb pob kuj raug kho raws li kev thov rau cov tshuaj zoo meej.

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Technical Specification

Gallium Antimonide

GaSb

Gallium Antimonide GaSbsubstrate yog siv nyob rau hauv cov feem ntau txiav-ntev yees duab-optic thiab optoelectronic daim ntaub ntawv xws li fabrications ntawm photo detectors, infrared detectors nrog lub neej ntev, siab rhiab heev thiab kev ntseeg siab, photoresist tivthaiv, infrared LEDs thiab lasers, transistors, thermal photovoltaic cell thiab thermo -photovoltaic systems.

	Cov khoom	Txheem Specification
1	Loj	2"	3"	4"
2	Txoj kab uas hla mm	50.5 ± 0.5	76.2 ± 0.5	100 ± 0.5
3	Txoj Kev Loj Hlob	LEC	LEC	LEC
4	Kev coj ua	P-type / Zn-doped, Un-doped, N-hom / Te-doped
5	Kev taw qhia	(100) ± 0.5 °, (111) ± 0.5 °
6	Thickness μm	500 ± 25	600 ± 25	800 ± 25
7	Orientation tiaj tus mm	16 ± 2	22 ± 1	32.5 ± 1
8	Identification Flat mm	8 ± 1	11 ± 1	18 ± 1
9	Mobility cm2/Vs	200-3500 los yog raws li xav tau
10	Cov Cuam Tshuam Cuam Tshuam cm-3	(1-100) E17 lossis raws li xav tau
11	TVV max	15	15	15
12	Taub μm max	15	15	15
13	Warp μm max	20	20	20
14	Dislocation Density cm-2 max	500	1000	2000
15	Nto tiav	P/E, P/P	P/E, P/P	P/E, P/P
16	Ntim	Ib lub wafer ntim ntim rau hauv Aluminium hnab.

Linear Formula	GaSb
Molecular Luj	191.48 Nws
Crystal qauv	Zinc sib tov
Qhov tshwm sim	Grey crystalline khoom
Melting Point	710 ° C
Boiling Point	N/A
Qhov ceev ntawm 300K	5.61 g / cm 2³
Zog Gap	0, 726 ywv
Intrinsic resistivity	1 E3 Ω-cm
CAS Nr	12064-03-8
EC Number	235-058-8 ib

Gallium Antimonide GaSbntawm Western Minmetals (SC) Corporation tuaj yeem muab nrog n-type, p-type thiab undoped semi-insulating conductivity nyob rau hauv qhov loj ntawm 2 "3" thiab 4 "(50mm, 75mm, 100mm) txoj kab uas hla, orientation <111> los yog <100 >, thiab nrog wafer nto tiav ntawm li-txiav, etched, polished lossis zoo epitaxy npaj tiav.Tag nrho cov hlais yog ib tus zuj zus laser scribed rau tus kheej.Lub caij no, polycrystalline gallium antimonide GaSb pob kuj raug kho raws li kev thov rau cov tshuaj zoo meej.