wmk_product_02

Gallium Nitride GaN

Kev piav qhia

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite siv lead ua qauv, yog binary compound direct band-gap semiconductor ntawm pab pawg III-V zus los ntawm cov txheej txheem tsim ammonothermal heev.Tus cwj pwm los ntawm qhov zoo tshaj plaws crystalline zoo, siab thermal conductivity, siab electron txav, siab tseem ceeb hluav taws xob teb thiab dav bandgap, Gallium Nitride GaN muaj cov yam ntxwv zoo hauv optoelectronics thiab sensing daim ntaub ntawv.

Daim ntawv thov

Gallium Nitride GaN yog tsim rau zus tau tej cov high-speed high-speed thiab muaj peev xwm ci-emitting diodes LEDs Cheebtsam, laser thiab optoelectronics li xws li ntsuab thiab xiav lasers, high electron mobility transistors (HEMTs) khoom thiab nyob rau hauv high-power. thiab high-temperature devices manufacturing kev lag luam.

Kev xa khoom

Gallium Nitride GaN ntawm Western Minmetals (SC) Corporation tuaj yeem muab qhov loj ntawm lub voj voog 2 nti ”lossis 4” (50mm, 100mm) thiab square wafer 10 × 10 lossis 10 × 5 mm.Ib qho customized loj thiab specification yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.


Paub meej

Cim npe

Technical Specification

Gallium Nitride GaN

GaN-W3

Gallium Nitride GaNntawm Western Minmetals (SC) Corporation tuaj yeem muab qhov loj ntawm wafer 2 nti ”lossis 4” (50mm, 100mm) thiab square wafer 10 × 10 lossis 10 × 5 mm.Ib qho customized loj thiab specification yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

Tsis muaj. Cov khoom Txheem Specification
1 Cov duab Lub voj voog Lub voj voog Square
2 Loj 2" 4" --
3 Txoj kab uas hla mm 50.8 ± 0.5 100 ± 0.5 --
4 Sab Length mm -- -- 10 x 10 or 10 x 5
5 Txoj Kev Loj Hlob HVPE HVPE HVPE
6 Kev taw qhia Lub dav hlau C (0001) Lub dav hlau C (0001) Lub dav hlau C (0001)
7 Hom conductivity N-hom / Si-doped, Un-doped, Semi-insulating
8 Resistant Ω-cm <0.1, <0.05, >1E6
9 Thickness μm 350 ± 25 350 ± 25 350 ± 25
10 TVV max 15 15 15
11 Taub μm max 20 20 20
12 PEB cm-2 <5E8 <5E8 <5E8
13 Nto tiav P/E, P/P P/E, P/P P/E, P/P
14 Nto Roughness Pem hauv ntej: ≤0.2nm, Rov qab: 0.5-1.5μm lossis ≤0.2nm
15 Ntim Ib lub wafer ntim ntim rau hauv Aluminium hnab.
Linear Formula GaN
Molecular Luj 83.73 ib
Crystal qauv Zinc hmoov / Wurtzite
Qhov tshwm sim Translucent khoom
Melting Point 2500 ° C
Boiling Point N/A
Qhov ceev ntawm 300K 6.15 g / cm33
Zog Gap (3.2-3.29) eV ntawm 300K
Intrinsic resistivity > 1E8 Ω-cm
CAS Nr 25617-97-4 ib
EC Number 247-129-0 : kuv

Gallium Nitride GaNyog tsim rau zus tau tej cov high-speed high-speed thiab muaj peev xwm ci-emitting diodes LEDs Cheebtsam, laser thiab optoelectronics li xws li ntsuab thiab xiav lasers, high electron mobility transistors (HEMTs) khoom thiab nyob rau hauv high-power thiab high- kub khoom manufacturing kev lag luam.

GaN-W1

GaN-W2

InP-W4

s12

PC-20

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Gallium Nitride GaN


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