Gallium Arsenide GaAs

Kev piav qhia

Gallium ArsenideGaAs yog a direct band gap compound semiconductor ntawm pawg III-V synthesized los ntawm tsawg kawg yog 6N 7N siab purity gallium thiab arsenic keeb, thiab zus siv lead ua los ntawm VGF los yog LEC txheej txheem los ntawm siab purity polycrystalline gallium arsenide, grey xim tsos, cubic muaju nrog zinc-blende qauv.Nrog rau doping ntawm carbon, silicon, tellurium los yog zinc kom tau n-hom los yog p-hom thiab semi-insulating conductivity feem, ib tug cylindrical InAs siv lead ua yuav hlais thiab fabricated rau hauv dawb paug thiab wafer nyob rau hauv raws li-txiav, etched, polished los yog epi -npaj rau MBE lossis MOCVD epitaxial kev loj hlob.Gallium Arsenide wafer feem ntau yog siv los tsim cov khoom siv hluav taws xob xws li infrared teeb-emitting diodes, laser diodes, kho qhov muag qhov rais, teb-tshuaj cuam tshuam transistors FETs, linear ntawm cov ICs thiab hnub ci hlwb.GaAs Cheebtsam muaj txiaj ntsig zoo hauv cov xov tooj cua ultra-siab thiab ceev hluav taws xob hloov daim ntawv thov, daim ntawv thov tsis muaj zog-sib nqus amplification.Tsis tas li ntawd, Gallium Arsenide substrate yog cov khoom siv zoo tshaj plaws rau kev tsim khoom ntawm RF Cheebtsam, microwave zaus thiab monolithic ICs, thiab cov khoom siv LEDs hauv kev sib txuas lus kho qhov muag thiab kev tswj hwm rau nws cov saturating nrog kev txav mus los, siab zog thiab kub stability.

Kev xa khoom

Gallium Arsenide GaAs ntawm Western Minmetals (SC) Corporation tuaj yeem muab tau raws li polycrystalline pob lossis ib qho siv lead ua wafer hauv kev txiav, etched, polished, lossis epi-npaj wafers hauv qhov loj ntawm 2 "3" 4 "thiab 6" (50mm, 75mm, 100mm, 150mm) txoj kab uas hla, nrog p-type, n-hom lossis semi-insulating conductivity, thiab <111> lossis <100> orientation.Cov kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

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Technical Specification

Gallium Arsenide

GaAs

Gallium Arsenide GaAswafers feem ntau yog siv los tsim cov khoom siv hluav taws xob xws li infrared teeb-emitting diodes, laser diodes, kho qhov muag qhov rais, teb-tshuaj cuam tshuam transistors FETs, linear ntawm cov ICs thiab hnub ci hlwb.GaAs Cheebtsam muaj txiaj ntsig zoo hauv cov xov tooj cua ultra-siab thiab ceev hluav taws xob hloov daim ntawv thov, daim ntawv thov tsis muaj zog-sib nqus amplification.Tsis tas li ntawd, Gallium Arsenide substrate yog cov khoom siv zoo tshaj plaws rau kev tsim khoom ntawm RF Cheebtsam, microwave zaus thiab monolithic ICs, thiab cov khoom siv LEDs hauv kev sib txuas lus kho qhov muag thiab kev tswj hwm rau nws cov saturating nrog kev txav mus los, siab zog thiab kub stability.

Tsis muaj.	Cov khoom	Txheem Specification
1	Loj	2"	3"	4"	6"
2	Txoj kab uas hla mm	50.8 ± 0.3	76.2 ± 0.3	100 ± 0.5	150 ± 0.5
3	Txoj Kev Loj Hlob	VGF	VGF	VGF	VGF
4	Hom conductivity	N-Type / Si lossis Te-doped, P-Type / Zn-doped, Semi-Insulating / Un-doped
5	Kev taw qhia	(100) ± 0.5 °	(100) ± 0.5 °	(100) ± 0.5 °	(100) ± 0.5 °
6	Thickness μm	350 ± 25	625 ± 25	625 ± 25	650 ± 25
7	Orientation tiaj tus mm	17 ± 1	22 ± 1	32 ± 1	Ntsig
8	Identification Flat mm	7 ± 1	12 ± 1	18 ± 1	-
9	Resistant Ω-cm	(1-9) E (-3) rau p-hom lossis n-hom, (1-10) E8 rau ib nrab insulating
10	Mobility cm2/vs	50-120 rau p-hom, (1-2.5) E3 rau n-hom, ≥4000 rau semi-insulating
11	Cov Cuam Tshuam Cuam Tshuam cm-3	(5-50)E18 rau p-hom, (0.8-4)E18 rau n-hom
12	TVV max	10	10	10	10
13	Taub μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	PEB cm-2	5000	5000	5000	5000
16	Nto tiav	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Ntim	Ib qho wafer ntim ntim rau hauv lub hnab aluminium composite.
18	Lus hais	Mechanical qib GaAs wafer kuj muaj raws li qhov kev thov.

Linear Formula	GaAs
Molecular Luj	144.64 ib
Crystal qauv	Zinc sib tov
Qhov tshwm sim	Grey crystalline khoom
Melting Point	1400 ° C, 2550 ° F
Boiling Point	N/A
Qhov ceev ntawm 300K	5.32 g / cm3³
Zog Gap	1, 424 eV
Intrinsic resistivity	3.3E8 Ω-cm
CAS Nr	1303-00-0 : kuv
EC Number	215-114-8 : kuv

Gallium Arsenide GaAsntawm Western Minmetals (SC) Corporation tuaj yeem muab los ua polycrystalline pob lossis ib qho siv lead ua wafer hauv kev txiav, etched, polished, lossis epi-npaj wafers hauv qhov loj ntawm 2 "3" 4 "thiab 6" (50mm, 75mm, 100mm , 150mm) txoj kab uas hla, nrog p-type, n-hom lossis semi-insulating conductivity, thiab <111> lossis <100> orientation.Cov kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.