Indium Phosphide InP

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Indium Phosphide InP,CAS No.22398-80-7, melting point 1600 ° C, binary compound semiconductor ntawm III-V tsev neeg, lub ntsej muag-centered cubic "zinc blende" siv lead ua qauv, zoo ib yam rau feem ntau ntawm III-V semiconductors, yog synthesized los ntawm 6N 7N siab purity indium thiab phosphorus keeb, thiab loj hlob rau hauv ib qho siv lead ua los ntawm LEC lossis VGF cov txheej txheem.Indium Phosphide siv lead ua yog doped ua n-hom, p-hom lossis semi-insulating conductivity rau ntxiv wafer fabrication mus txog 6 "(150 mm) txoj kab uas hla, uas nta nws cov ncaj band sib txawv, superior siab zog ntawm electrons thiab qhov thiab npaum thermal. conductivity.Indium Phosphide InP Wafer prime lossis qib xeem ntawm Western Minmetals (SC) Corporation tuaj yeem muab nrog p-type, n-hom thiab semi-insulating conductivity hauv qhov loj ntawm 2 "3" 4 "thiab 6" (txog 150mm) inch, orientation <111> los yog <100> thiab thickness 350-625um nrog nto tiav ntawm etched thiab polished los yog Epi-npaj txheej txheem.Meanwhile Indium Phosphide Ib Leeg Crystal ingot 2-6 "muaj nyob rau ntawm kev thov.Polycrystalline Indium Phosphide InP lossis Multi-crystal InP ingot hauv qhov loj ntawm D (60-75) x Length (180-400) mm ntawm 2.5-6.0kg nrog cov cab kuj concentration tsawg dua 6E15 lossis 6E15-3E16 kuj muaj.Txhua qhov kev qhia tshwj xeeb muaj nyob rau ntawm kev thov kom ua tiav cov kev daws teeb meem zoo tshaj plaws.

Daim ntawv thov

Indium Phosphide InP wafer yog dav siv rau kev tsim khoom ntawm optoelectronic Cheebtsam, high-power thiab high-frequency electronic devices, raws li ib tug substrate rau epitaxial indium-gallium-arsenide (InGaAs) raws li opto-electronic li.Indium Phosphide tseem yog nyob rau hauv kev tsim rau lub teeb pom kev zoo heev hauv kev sib txuas lus fiber ntau, microwave fais fab khoom siv, microwave amplifiers thiab rooj vag FETs li, high-speed modulators thiab photo-detectors, thiab satellite navigation thiab hais txog.

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Technical Specification

Indium Phosphide InP

Indium Phosphide Ib Leeg CrystalWafer (InP siv lead ua ingot lossis Wafer) ntawm Western Minmetals (SC) Corporation tuaj yeem muab nrog p-type, n-hom thiab semi-insulating conductivity hauv qhov loj ntawm 2 "3" 4 "thiab 6" (txog 150mm) txoj kab uas hla, orientation <111> los yog <100> thiab thickness 350-625um nrog nto tiav ntawm etched thiab polished los yog Epi-npaj txheej txheem.

Indium Phosphide Polycrystallinelos yog Multi-Crystal ingot (InP poly ingot) loj ntawm D (60-75) x L (180-400) mm ntawm 2.5-6.0kg nrog cov cab kuj concentration tsawg dua 6E15 los yog 6E15-3E16 yog muaj.Txhua qhov kev qhia tshwj xeeb muaj nyob rau ntawm kev thov kom ua tiav cov kev daws teeb meem zoo tshaj plaws.

Tsis muaj.	Cov khoom	Txheem Specification
1	Indium Phosphide Ib Leeg Crystal	2"	3"	4"
2	Txoj kab uas hla mm	50.8 ± 0.5	76.2 ± 0.5	100 ± 0.5
3	Txoj Kev Loj Hlob	VGF	VGF	VGF
4	Kev coj ua	P / Zn-doped, N / (S-doped lossis un-doped), Semi-insulating
5	Kev taw qhia	(100) ± 0.5 °, (111) ± 0.5 °
6	Thickness μm	350 ± 25	600 ± 25	600 ± 25
7	Orientation tiaj tus mm	16 ± 2	22 ± 1	32.5 ± 1
8	Identification Flat mm	8 ± 1	11 ± 1	18 ± 1
9	Mobility cm2/Vs	50-70, > 2000, (1.5-4)E3
10	Cov Cuam Tshuam Cuam Tshuam cm-3	(0.6-6)E18, ≤3E16
11	TVV max	10	10	10
12	Taub μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	500	1000	2000
15	Nto tiav	P/E, P/P	P/E, P/P	P/E, P/P
16	Ntim	Ib qho wafer ntim ntim rau hauv lub hnab aluminium composite.

Tsis muaj.	Cov khoom	Txheem Specification
1	Indium Phosphide Ingot	Poly-Crystalline lossis Multi-Crystal Ingot
2	Crystal Loj	D (60-75) x L (180-400) mm
3	Qhov hnyav rau Crystal Ingot	2.5-6.0 Kg
4	Mobility	≥3500 cm²/VS
5	Carrier Concentration	≤6E15, los yog 6E15-3E16 cm^-3
6	Ntim	Txhua InP siv lead ua ingot yog nyob rau hauv lub hnab yas kaw, 2-3 ingots hauv ib lub thawv.

Linear Formula	InP
Molecular Luj	145.79 ib
Crystal qauv	Zinc sib tov
Qhov tshwm sim	Crystalline
Melting Point	1062 ° C
Boiling Point	N/A
Qhov ceev ntawm 300K	4.81 g / cm 2³
Zog Gap	1, 344 eV
Intrinsic resistivity	8.6E7 Ω-cm
CAS Nr	22398-80-7 ib
EC Number	244-959-5 ib

Indium Phosphide InP Waferyog dav siv rau kev tsim khoom ntawm optoelectronic Cheebtsam, high-power thiab high-frequency electronics, raws li ib tug substrate rau epitaxial indium-gallium-arsenide (InGaAs) raws li opto-electronic li.Indium Phosphide tseem yog nyob rau hauv kev tsim rau lub teeb pom kev zoo heev hauv kev sib txuas lus fiber ntau, microwave fais fab khoom siv, microwave amplifiers thiab rooj vag FETs li, high-speed modulators thiab photo-detectors, thiab satellite navigation thiab hais txog.