FZ Silicon Wafer

Kev piav qhia

FZ Ib leeg Crystal Silicon Wafer,Float-zone (FZ) Silicon yog cov ntshiab silicon uas tsis tshua muaj siab ntawm oxygen thiab carbon impurities rub los ntawm ntsug floating cheeb tsam refining tshuab.FZ Floating zone yog ib qho siv lead ua ingot loj hlob txoj kev uas txawv ntawm CZ txoj kev uas cov noob siv lead ua txuas hauv qab polycrystalline silicon ingot, thiab ciam teb ntawm cov noob siv lead ua thiab polycrystalline crystal silicon yog yaj los ntawm RF coil induction cua sov rau ib qho crystallization.Lub RF coil thiab thaj tsam melted txav mus rau sab saud, thiab ib qho siv lead ua ib leeg solidifies rau saum cov noob siv lead ua raws li.Float-zone silicon yog guaranteed nrog ib tug uniform dopant tis, qis resistivity variation, txwv tsis pub muaj impurities, lub neej muaj nuj nqis loj, siab resistivity phiaj thiab siab purity silicon.Float-zone silicon yog ib qho kev coj dawb huv rau cov muaju uas loj hlob los ntawm cov txheej txheem Czochralski CZ.Nrog rau cov yam ntxwv ntawm txoj kev no, FZ Ib Leeg Crystal Silicon yog qhov zoo tshaj plaws rau kev siv hauv cov khoom siv hluav taws xob, xws li diodes, thyristors, IGBTs, MEMS, diode, RF ntaus ntawv thiab lub zog MOSFETs, los yog ua lub substrate rau high-resolution particle los yog optical detectors. , cov khoom siv hluav taws xob thiab cov sensors, kev ua haujlwm siab hnub ci cell thiab lwm yam.

Kev xa khoom

FZ Ib Leeg Crystal Silicon Wafer N-hom thiab P-hom conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem xa hauv qhov loj ntawm 2, 3, 4, 6 thiab 8 nti (50mm, 75mm, 100mm, 125mm, 150mm thiab 200mm) thiab orientation <100>, <110>, <111> nrog nto tiav ntawm As-txiav, Lapped, etched thiab polished nyob rau hauv pob ntawm foam box los yog cassette nrog lub thawv sab nraud.

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Cim npe

Technical Specification

FZ Silicon Wafer

FZ Ib leeg Crystal Silicon Waferlos yog FZ Mono-crystal Silicon Wafer ntawm intrinsic, n-type thiab p-type conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem xa tawm ntau qhov loj ntawm 2, 3, 4, 6 thiab 8 nti inch (50mm, 75mm, 100mm , 125mm, 150mm thiab 200mm) thiab ntau yam thickness ntawm 279um mus txog 2000um nyob rau hauv <100>, <110>, <111> orientation nrog nto tiav ntawm as-txiav, lapped, etched thiab polished nyob rau hauv pob ntawm foam box los yog cassette nrog lub thawv ntawv sab nraud.

Tsis muaj.	Cov khoom	Txheem Specification
1	Loj	2"	3"	4"	5"	6"
2	Txoj kab uas hla mm	50.8 ± 0.3	76.2 ± 0.3	100 ± 0.5	125 ± 0.5	150 ± 0.5
3	Kev coj ua	N/P	N/P	N/P	N/P	N/P
4	Kev taw qhia	<100>, <110>, <111>
5	Thickness μm	279, 381, 425, 525, 575, 625, 675, 725 los yog raws li xav tau
6	Resistant Ω-cm	1-3, 3-5, 40-60, 800-1000, 1000-1400 los yog raws li xav tau
7	RRV max	8%, 10%, 12%
8	TVV max	10	10	10	10	10
9	Hnyav / Warp μm max	30	30	30	30	30
10	Nto tiav	Raws li kev txiav, L / L, P / E, P / P
11	Ntim	Ua npuas ncauj lub thawv los yog cassette sab hauv, thawv thawv sab nraum.

Cim	Si
Atomic Number	14
Atomic hnyav	28.09 Nws
Qeb Element	Metalloid
Pawg, Lub Sijhawm, Thaiv	14, 3, ib
Crystal qauv	Pob zeb diamond
Xim	Tsaus grey
Melting Point	1414 ° C, 1687.15 K
Boiling Point	3265 ° C, 3538.15 K
Qhov ceev ntawm 300K	2.329 g / cm3³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Nr	7440-21-3 : kuv
EC Number	231-130-8 : kuv

FZ Ib leeg Crystal Silicon, nrog cov yam ntxwv tseem ceeb ntawm Float-zone (FZ) txoj kev, yog qhov zoo tshaj plaws rau kev siv hauv cov khoom siv hluav taws xob, xws li diodes, thyristors, IGBTs, MEMS, diode, RF ntaus ntawv thiab lub zog MOSFETs, los yog raws li lub substrate rau high-resolution. particle lossis optical detectors, cov khoom siv fais fab thiab cov sensors, kev ua haujlwm siab hnub ci cell thiab lwm yam.