Gallium Arsenide
GaAs
Gallium Arsenide GaAswafers feem ntau yog siv los tsim cov khoom siv hluav taws xob xws li infrared teeb-emitting diodes, laser diodes, kho qhov muag qhov rais, teb-tshuaj cuam tshuam transistors FETs, linear ntawm cov ICs thiab hnub ci hlwb.GaAs Cheebtsam muaj txiaj ntsig zoo hauv cov xov tooj cua ultra-siab thiab ceev hluav taws xob hloov daim ntawv thov, daim ntawv thov tsis muaj zog-sib nqus amplification.Tsis tas li ntawd, Gallium Arsenide substrate yog cov khoom siv zoo tshaj plaws rau kev tsim khoom ntawm RF Cheebtsam, microwave zaus thiab monolithic ICs, thiab cov khoom siv LEDs hauv kev sib txuas lus kho qhov muag thiab kev tswj hwm rau nws cov saturating nrog kev txav mus los, siab zog thiab kub stability.
| Tsis muaj. | Cov khoom | Txheem Specification | |||
| 1 | Loj | 2" | 3" | 4" | 6" |
| 2 | Txoj kab uas hla mm | 50.8 ± 0.3 | 76.2 ± 0.3 | 100 ± 0.5 | 150 ± 0.5 |
| 3 | Txoj Kev Loj Hlob | VGF | VGF | VGF | VGF |
| 4 | Hom conductivity | N-Type / Si lossis Te-doped, P-Type / Zn-doped, Semi-Insulating / Un-doped | |||
| 5 | Kev taw qhia | (100) ± 0.5 ° | (100) ± 0.5 ° | (100) ± 0.5 ° | (100) ± 0.5 ° |
| 6 | Thickness μm | 350 ± 25 | 625 ± 25 | 625 ± 25 | 650 ± 25 |
| 7 | Orientation tiaj tus mm | 17 ± 1 | 22 ± 1 | 32 ± 1 | Ntsig |
| 8 | Identification Flat mm | 7 ± 1 | 12 ± 1 | 18 ± 1 | - |
| 9 | Resistant Ω-cm | (1-9) E (-3) rau p-hom lossis n-hom, (1-10) E8 rau ib nrab insulating | |||
| 10 | Mobility cm2/vs | 50-120 rau p-hom, (1-2.5) E3 rau n-hom, ≥4000 rau semi-insulating | |||
| 11 | Cov Cuam Tshuam Cuam Tshuam cm-3 | (5-50)E18 rau p-hom, (0.8-4)E18 rau n-hom | |||
| 12 | TVV max | 10 | 10 | 10 | 10 |
| 13 | Taub μm max | 30 | 30 | 30 | 30 |
| 14 | Warp μm max | 30 | 30 | 30 | 30 |
| 15 | PEB cm-2 | 5000 | 5000 | 5000 | 5000 |
| 16 | Nto tiav | P/E, P/P | P/E, P/P | P/E, P/P | P/E, P/P |
| 17 | Ntim | Ib qho wafer ntim ntim rau hauv lub hnab aluminium composite. | |||
| 18 | Lus hais | Mechanical qib GaAs wafer kuj muaj raws li qhov kev thov. | |||
| Linear Formula | GaAs |
| Molecular Luj | 144.64 ib |
| Crystal qauv | Zinc sib tov |
| Qhov tshwm sim | Grey crystalline khoom |
| Melting Point | 1400 ° C, 2550 ° F |
| Boiling Point | N/A |
| Qhov ceev ntawm 300K | 5.32 g / cm33 |
| Zog Gap | 1, 424 eV |
| Intrinsic resistivity | 3.3E8 Ω-cm |
| CAS Nr | 1303-00-0 : kuv |
| EC Number | 215-114-8 : kuv |
Gallium Arsenide GaAsntawm Western Minmetals (SC) Corporation tuaj yeem muab los ua polycrystalline pob lossis ib qho siv lead ua wafer hauv kev txiav, etched, polished, lossis epi-npaj wafers hauv qhov loj ntawm 2 "3" 4 "thiab 6" (50mm, 75mm, 100mm , 150mm) txoj kab uas hla, nrog p-type, n-hom lossis semi-insulating conductivity, thiab <111> lossis <100> orientation.Cov kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.
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