Gallium Nitride GaN

Kev piav qhia

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite siv lead ua qauv, yog binary compound direct band-gap semiconductor ntawm pab pawg III-V zus los ntawm cov txheej txheem tsim ammonothermal heev.Tus cwj pwm los ntawm qhov zoo tshaj plaws crystalline zoo, siab thermal conductivity, siab electron txav, siab tseem ceeb hluav taws xob teb thiab dav bandgap, Gallium Nitride GaN muaj cov yam ntxwv zoo hauv optoelectronics thiab sensing daim ntaub ntawv.

Daim ntawv thov

Gallium Nitride GaN yog tsim rau zus tau tej cov high-speed high-speed thiab muaj peev xwm ci-emitting diodes LEDs Cheebtsam, laser thiab optoelectronics li xws li ntsuab thiab xiav lasers, high electron mobility transistors (HEMTs) khoom thiab nyob rau hauv high-power. thiab high-temperature devices manufacturing kev lag luam.

Kev xa khoom

Gallium Nitride GaN ntawm Western Minmetals (SC) Corporation tuaj yeem muab qhov loj ntawm lub voj voog 2 nti ”lossis 4” (50mm, 100mm) thiab square wafer 10 × 10 lossis 10 × 5 mm.Ib qho customized loj thiab specification yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

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Paub meej

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Technical Specification

Gallium Nitride GaN

Gallium Nitride GaNntawm Western Minmetals (SC) Corporation tuaj yeem muab qhov loj ntawm wafer 2 nti ”lossis 4” (50mm, 100mm) thiab square wafer 10 × 10 lossis 10 × 5 mm.Ib qho customized loj thiab specification yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

Tsis muaj.	Cov khoom	Txheem Specification
1	Cov duab	Lub voj voog	Lub voj voog	Square
2	Loj	2"	4"	--
3	Txoj kab uas hla mm	50.8 ± 0.5	100 ± 0.5	--
4	Sab Length mm	--	--	10 x 10 or 10 x 5
5	Txoj Kev Loj Hlob	HVPE	HVPE	HVPE
6	Kev taw qhia	Lub dav hlau C (0001)	Lub dav hlau C (0001)	Lub dav hlau C (0001)
7	Hom conductivity	N-hom / Si-doped, Un-doped, Semi-insulating
8	Resistant Ω-cm	<0.1, <0.05, >1E6
9	Thickness μm	350 ± 25	350 ± 25	350 ± 25
10	TVV max	15	15	15
11	Taub μm max	20	20	20
12	PEB cm-2	<5E8	<5E8	<5E8
13	Nto tiav	P/E, P/P	P/E, P/P	P/E, P/P
14	Nto Roughness	Pem hauv ntej: ≤0.2nm, Rov qab: 0.5-1.5μm lossis ≤0.2nm
15	Ntim	Ib lub wafer ntim ntim rau hauv Aluminium hnab.

Linear Formula	GaN
Molecular Luj	83.73 ib
Crystal qauv	Zinc hmoov / Wurtzite
Qhov tshwm sim	Translucent khoom
Melting Point	2500 ° C
Boiling Point	N/A
Qhov ceev ntawm 300K	6.15 g / cm3³
Zog Gap	(3.2-3.29) eV ntawm 300K
Intrinsic resistivity	> 1E8 Ω-cm
CAS Nr	25617-97-4 ib
EC Number	247-129-0 : kuv

Gallium Nitride GaNyog tsim rau zus tau tej cov high-speed high-speed thiab muaj peev xwm ci-emitting diodes LEDs Cheebtsam, laser thiab optoelectronics li xws li ntsuab thiab xiav lasers, high electron mobility transistors (HEMTs) khoom thiab nyob rau hauv high-power thiab high- kub khoom manufacturing kev lag luam.