Kev piav qhia
Indium Antimonide InSb, semiconductor ntawm pawg III-V crystalline tebchaw nrog zinc-blende lattice qauv, yog synthesized los ntawm 6N 7N siab purity Indium thiab antimony ntsiab, thiab zus ib siv lead ua los ntawm VGF txoj kev los yog Liquid Encapsulated Czochralski LEC txoj kev los ntawm ntau cheeb tsam refined polycrystalline ingot, uas tuaj yeem hlais thiab fabricated rau hauv wafer thiab thaiv tom qab.InSb yog ib qho kev hloov pauv ncaj qha semiconductor nrog qhov sib txawv ntawm qhov nqaim ntawm 0.17eV nyob rau hauv chav tsev kub, siab rhiab heev rau 1-5μm wavelength thiab ultra siab nrog kev txav mus los.Indium Antimonide InSb n-hom, p-hom thiab semi-insulating conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem muaj qhov loj ntawm 1 "2" 3 "thiab 4" (30mm, 50mm, 75mm, 100mm) txoj kab uas hla, kev taw qhia < 111> los yog <100>, thiab nrog wafer nto tiav ntawm as-txiav, lapped, etched thiab polished.Indium Antimonide InSb lub hom phiaj ntawm Dia.50-80mm nrog un-doped n-hom kuj muaj.Lub caij no, polycrystalline indium antimonide InSb (multicrystal InSb) nrog qhov loj ntawm cov pob tsis sib xws, lossis dawb paug (15-40) x (40-80) hli, thiab puag ncig ntawm D30-80mm kuj tau kho raws li kev thov rau cov tshuaj zoo meej.
Daim ntawv thov
Indium Antimonide InSb yog ib qho zoo tshaj plaws substrate rau zus tau tej cov khoom ntawm lub xeev-of-kos duab thiab khoom siv, xws li advanced thermal imaging tov, FLIR system, Hall element thiab magnetoresistance effect element, infrared homing missile guidance system, heev teb Infrared photodetector sensor. , high-precision sib nqus thiab rotary resistivity sensor, focal planar arrays, thiab kuj yoog raws li terahertz hluav taws xob qhov chaw thiab infrared astronomical space telescope thiab lwm yam.
Technical Specification
Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-type lossis p-type ntawm Western Minmetals (SC) Corporation tuaj yeem muaj qhov loj ntawm 1 "2" 3 "thiab 4" (30, 50, 75 thiab 100mm) txoj kab uas hla, kev taw qhia <111> lossis <100>, thiab Indium Antimonide Ib Leeg Crystal bar (InSb Monocrystal bar) kuj tuaj yeem muab tau raws li kev thov.
Indium AntimonidePolycrystalline (InSb Polycrystalline, los yog multicrystal InSb) nrog qhov loj ntawm cov pob tsis sib xws, los yog dawb paug (15-40) x (40-80) hli kuj raug kho raws li kev thov rau cov tshuaj zoo meej.
Lub caij no, Indium Antimonide Target (InSb Target) ntawm Dia.50-80mm nrog un-doped n-hom kuj muaj.
Tsis muaj. | Cov khoom | Txheem Specification | ||
1 | Indium Antimonide Substrate | 2" | 3" | 4" |
2 | Txoj kab uas hla mm | 50.5 ± 0.5 | 76.2 ± 0.5 | 100 ± 0.5 |
3 | Txoj Kev Loj Hlob | LEC | LEC | LEC |
4 | Kev coj ua | P-type / Zn, Ge doped, N-type / Te-doped, Un-doped | ||
5 | Kev taw qhia | (100) ± 0.5 °, (111) ± 0.5 ° | ||
6 | Thickness μm | 500 ± 25 | 600 ± 25 | 800 ± 25 |
7 | Orientation tiaj tus mm | 16 ± 2 | 22 ± 1 | 32.5 ± 1 |
8 | Identification Flat mm | 8 ± 1 | 11 ± 1 | 18 ± 1 |
9 | Mobility cm2/Vs | 1-7E5 N / un-doped, 3E5-2E4 N / Te-doped, 8-0.6E3 los yog ≤8E13 P / Ge-doped | ||
10 | Cov Cuam Tshuam Cuam Tshuam cm-3 | 6E13-3E14 N / un-doped, 3E14-2E18 N / Te-doped, 1E14-9E17 los yog <1E14 P / Ge-doped | ||
11 | TVV max | 15 | 15 | 15 |
12 | Taub μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Dislocation Density cm-2 max | 50 | 50 | 50 |
15 | Nto tiav | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Ntim | Ib lub wafer ntim ntim rau hauv Aluminium hnab. |
Tsis muaj. | Cov khoom | Txheem Specification | |
IAntimonide Polycrystalline hmoov | Indium Antimonide Lub Hom Phiaj | ||
1 | Kev coj ua | Undoped | Undoped |
2 | Carrier Concentration cm-3 | 6 E13-3E14 | 1.9-2.1E16 |
3 | Mobility cm2/Vs | 5-7 E5 | 6.9-7.9 E4 |
4 | Loj | 15-40x40-80 mm | D (50-80) hli |
5 | Ntim | Nyob rau hauv cov khoom siv txhuas lub hnab, thawv thawv sab nraud |
Linear Formula | InSb |
Molecular Luj | 236.58 Nws |
Crystal qauv | Zinc sib tov |
Qhov tshwm sim | Tsaus grey metallic crystals |
Melting Point | 527 ° C |
Boiling Point | N/A |
Qhov ceev ntawm 300K | 5.78 g / cm33 |
Zog Gap | 0, 17 eV |
Intrinsic resistivity | 4E (-3) Ω-cm |
CAS Nr | 1312-41-0 |
EC Number | 215-192-3 ib |
Is Nrias teb Antimonide InSbwafer yog ib qho zoo tshaj plaws substrate rau zus tau tej cov khoom nyob rau hauv lub xeev-of-kos duab thiab cov khoom siv, xws li advanced thermal imaging tov, FLIR system, nrog lub ntsiab thiab magnetoresistance nyhuv, infrared homing missile guidance system, siab-teev Infrared photodetector sensor, siab. -precision sib nqus thiab rotary resistivity sensor, focal planar arrays, thiab kuj yoog raws li terahertz hluav taws xob qhov chaw thiab hauv infrared astronomical space telescope thiab lwm yam.
Cov lus qhia txog kev yuav khoom
Is Nrias teb Antimonide InSb