Indium Arsenide InAs

Kev piav qhia

Indium arsenide InAs siv lead ua yog ib qho khoom siv semiconductor ntawm pab pawg III-V synthesized los ntawm tsawg kawg 6N 7N ntshiab Indium thiab Arsenic keeb thiab loj hlob ib leeg siv lead ua los ntawm VGF los yog Liquid Encapsulated Czochralski (LEC) txheej txheem, grey xim tsos, cubic muaju nrog zinc-blende qauv. melting point ntawm 942 ° C.Indium arsenide band kis yog ib qho kev hloov pauv ncaj qha zoo ib yam rau gallium arsenide, thiab qhov txwv tsis pub band dav yog 0.45eV (300K).InAs siv lead ua muaj qhov sib xws ntawm cov hluav taws xob tsis sib xws, cov lattice tas li, kev txav hluav taws xob siab thiab qhov tsis xws luag.Lub cylindrical InAs siv lead ua loj hlob los ntawm VGF lossis LEC tuaj yeem raug txiav thiab tsim rau hauv wafer li-txiav, etched, polished lossis epi-npaj rau MBE lossis MOCVD epitaxial kev loj hlob.

Daim ntawv thov

Indium arsenide siv lead ua wafer yog ib qho zoo heev substrate rau ua Hall cov cuab yeej thiab magnetic teb sensor rau nws lub supreme Hall kev mus los tab sis nqaim zog bandgap, ib tug zoo tagnrho cov ntaub ntawv rau kev tsim kho ntawm infrared detectors nrog lub wavelength ntawm 1-3.8 µm siv nyob rau hauv cov ntaub ntawv ntau zog. Nyob rau hauv chav tsev kub, nrog rau nruab nrab wavelength infrared super lattice lasers, mid-infrared LEDs li fabrication rau nws 2-14 μm wavelength ntau.Tsis tas li ntawd, InAs yog ib qho zoo tshaj plaws substrate los txhawb cov heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb los yog AlGaSb super lattice qauv thiab lwm yam.

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Technical Specification

Indium Arsenide

InAs

Indium Arsenide Crystal Waferyog ib qho zoo heev substrate rau ua Hall pab kiag li lawm thiab magnetic teb sensor rau nws supreme hall kev mus los tab sis nqaim zog bandgap, ib tug zoo tagnrho cov ntaub ntawv rau kev tsim kho ntawm infrared detectors nrog lub wavelength ntawm 1-3.8 µm siv nyob rau hauv ntau dua-power daim ntaub ntawv ntawm chav tsev kub, as well as mid wavelength infrared super lattice lasers, mid-infrared LEDs devices fabrication for its 2-14 μm wavelength range.Tsis tas li ntawd, InAs yog ib qho zoo tshaj plaws substrate los txhawb cov heterogeneous InGaAs, InAsSb, InAsPSb & InNAsSb los yog AlGaSb super lattice qauv thiab lwm yam.

Tsis muaj.	Cov khoom	Txheem Specification
1	Loj	2"	3"	4"
2	Txoj kab uas hla mm	50.5 ± 0.5	76.2 ± 0.5	100 ± 0.5
3	Txoj Kev Loj Hlob	LEC	LEC	LEC
4	Kev coj ua	P-type / Zn-doped, N-hom / S-doped, Un-doped
5	Kev taw qhia	(100) ± 0.5 °, (111) ± 0.5 °
6	Thickness μm	500 ± 25	600 ± 25	800 ± 25
7	Orientation tiaj tus mm	16 ± 2	22 ± 2	32 ± 2
8	Identification Flat mm	8 ± 1	11 ± 1	18 ± 1
9	Mobility cm2/Vs	60-300, ≥2000 lossis raws li xav tau
10	Cov Cuam Tshuam Cuam Tshuam cm-3	(3-80)E17 los yog ≤5E16
11	TVV max	10	10	10
12	Taub μm max	10	10	10
13	Warp μm max	15	15	15
14	Dislocation Density cm-2 max	1000	2000	5000
15	Nto tiav	P/E, P/P	P/E, P/P	P/E, P/P
16	Ntim	Ib lub wafer ntim ntim rau hauv Aluminium hnab.

Linear Formula	InAs
Molecular Luj	189.74 ib
Crystal qauv	Zinc sib tov
Qhov tshwm sim	Grey crystalline khoom
Melting Point	(936-942) ° C
Boiling Point	N/A
Qhov ceev ntawm 300K	5.67 g / cm 2³
Zog Gap	0, 354 eV
Intrinsic Resistivity	0.16 Ω-cm
CAS Nr	1303-11-3 : kuv
EC Number	215-115-3 ib

Indium Arsenide InAsntawm Western Minmetals (SC) Corporation tuaj yeem muab los ua polycrystalline pob lossis ib qho siv lead ua raws li-txiav, etched, polished, lossis epi-npaj wafers hauv qhov loj ntawm 2 "3" thiab 4" (50mm, 75mm, 100mm) txoj kab uas hla, thiab p-type, n-type lossis un-doped conductivity thiab <111> lossis <100> orientation.Cov kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.