wmk_product_02

Silicon Carbide SiC

Kev piav qhia

Silicon Carbide Wafer SiC, yog ib qho nyuaj heev, synthetically tsim crystalline compound ntawm silicon thiab carbon los ntawm MOCVD txoj kev, thiab ua pov thawjnws qhov txawv ntawm qhov sib txawv ntawm qhov sib txawv thiab lwm yam zoo ntawm cov coefficient ntawm thermal expansion, siab dua kev khiav hauj lwm kub, zoo tshav kub dissipation, qis switching thiab conduction poob, ntau zog npaum, siab thermal conductivity thiab muaj zog hluav taws xob teb tawg lub zog, raws li zoo raws li ntau concentrated tam sim no. mob.Silicon Carbide SiC ntawm Western Minmetals (SC) Corporation tuaj yeem muab rau hauv qhov loj ntawm 2 "3" 4" thiab 6 "(50mm, 75mm, 100mm, 150mm) txoj kab uas hla, nrog n-hom, semi-insulating lossis dummy wafer rau kev lag luam thiab kuaj daim ntawv thov.Txhua yam kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

Daim ntawv thov

High quality 4H / 6H Silicon Carbide SiC wafer yog zoo meej rau kev tsim khoom ntawm ntau yam kev txiav-ntug superior ceev, high-temperature & high-voltage electronic devices xws li Schottky diodes & SBD, high-power switching MOSFETs & JFETs, thiab lwm yam. kuj yog ib qho khoom tsim nyog hauv kev tshawb fawb & kev txhim kho ntawm insulated-gate bipolar transistors thiab thyristors.Raws li cov khoom siv hluav taws xob tshiab zoo tshaj plaws, Silicon Carbide SiC wafer kuj tseem ua haujlwm raws li cov khoom siv hluav taws xob muaj txiaj ntsig hauv cov khoom siv hluav taws xob muaj zog LEDs, lossis ua ib qho chaw ruaj khov thiab nrov substrate rau kev loj hlob GaN txheej hauv kev pom zoo ntawm kev tshawb fawb yav tom ntej.


Paub meej

Cim npe

Technical Specification

SiC-W1

Silicon Carbide SiC

Silicon Carbide SiCntawm Western Minmetals (SC) Corporation tuaj yeem muab rau hauv qhov loj ntawm 2 "3" 4" thiab 6 "(50mm, 75mm, 100mm, 150mm) txoj kab uas hla, nrog n-hom, semi-insulating lossis dummy wafer rau kev lag luam thiab kev sim daim ntawv thov .Txhua qhov tshwj xeeb customized yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.

Linear Formula SiC
Molecular Luj 40.1 ib
Crystal qauv Wurtzite
Qhov tshwm sim Khoom
Melting Point 3103 ± 40K
Boiling Point N/A
Qhov ceev ntawm 300K 3.21 g / cm33
Zog Gap (3.00-3.23) dr hab
Intrinsic resistivity > 1E5 Ω-cm
CAS Nr 409-21-2 : kuv
EC Number 206-991-8
Tsis muaj. Cov khoom Txheem Specification
1 SiC Size 2" 3" 4" 6"
2 Txoj kab uas hla mm 50.8 0.38 Nws 76.2 0.38 Nws 100 0.5 1500.5 Nws
3 Txoj Kev Loj Hlob MOCVD MOCVD MOCVD MOCVD
4 Hom conductivity 4H-N, 6H-N, 4H-SI, 6H-SI
5 Resistant Ω-cm 0.015-0.028;0.02-0.1;> 1E5
6 Kev taw qhia 0 ° ± 0.5 °;4.0 ° rau <1120>
7 Thickness μm 330 ± 25 330 ± 25 (350-500) ± 25 (350-500) ± 25
8 Qhov Chaw Uas Tseem Ceeb <1-100> ± 5° <1-100> ± 5° <1-100> ± 5° <1-100> ± 5°
9 Primary Flat Ntev mm 16 ± 1.7 22.2 ± 3.2 32.5 ± 2 47.5 ± 2.5
10 Secondary Flat Qhov Chaw Silicon ntsej muag: 90 °, clockwise los ntawm prime ca ± 5.0 °
11 Secondary Flat Ntev mm 8 ± 1.7 11.2 ± 1.5 18 ± 2 22 ± 2.5
12 TVV max 15 15 15 15
13 Taub μm max 40 40 40 40
14 Warp μm max 60 60 60 60
15 Ntug Exclusion mm max 1 2 3 3
16 Micropipe ntom cm-2 <5, kev lag luam;<15, lab;<50, ua
17 Dislocation cm-2 <3000, muaj;<20000, lab;<500000, ua tsaug
18 Nto Roughness nm max 1 (Polished), 0.5 (CMP)
19 Kev tawg Tsis yog, rau qib industrial
20 Hexagonal phaj Tsis yog, rau qib industrial
21 Kos ≤3mm, tag nrho ntev tsawg dua substrate txoj kab uas hla
22 Ntug Chips Tsis yog, rau qib industrial
23 Ntim Ib qho wafer ntim ntim rau hauv lub hnab aluminium composite.

Silicon Carbide SiC 4H / 6Hzoo wafer zoo meej rau kev tsim khoom ntawm ntau yam kev txiav-ntug superior ceev, high-temperature & high-voltage electronic devices xws li Schottky diodes & SBD, high-power switching MOSFETs & JFETs, thiab lwm yam. Nws kuj yog ib qho khoom tsim nyog hauv cov Kev tshawb fawb & kev txhim kho ntawm insulated-gate bipolar transistors thiab thyristors.Raws li cov khoom siv hluav taws xob tshiab zoo tshaj plaws, Silicon Carbide SiC wafer kuj tseem ua haujlwm raws li cov khoom siv hluav taws xob muaj txiaj ntsig hauv cov khoom siv hluav taws xob muaj zog LEDs, lossis ua ib qho chaw ruaj khov thiab nrov substrate rau kev loj hlob GaN txheej hauv kev pom zoo ntawm kev tshawb fawb yav tom ntej.

SiC-W

InP-W4

PC-20

SiC-W2

s20

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Silicon Carbide SiC


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