Kev piav qhia
Silicon Carbide Wafer SiC, yog ib qho nyuaj heev, synthetically tsim crystalline compound ntawm silicon thiab carbon los ntawm MOCVD txoj kev, thiab ua pov thawjnws qhov txawv ntawm qhov sib txawv ntawm qhov sib txawv thiab lwm yam zoo ntawm cov coefficient ntawm thermal expansion, siab dua kev khiav hauj lwm kub, zoo tshav kub dissipation, qis switching thiab conduction poob, ntau zog npaum, siab thermal conductivity thiab muaj zog hluav taws xob teb tawg lub zog, raws li zoo raws li ntau concentrated tam sim no. mob.Silicon Carbide SiC ntawm Western Minmetals (SC) Corporation tuaj yeem muab rau hauv qhov loj ntawm 2 "3" 4" thiab 6 "(50mm, 75mm, 100mm, 150mm) txoj kab uas hla, nrog n-hom, semi-insulating lossis dummy wafer rau kev lag luam thiab kuaj daim ntawv thov.Txhua yam kev cai tshwj xeeb yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.
Daim ntawv thov
High quality 4H / 6H Silicon Carbide SiC wafer yog zoo meej rau kev tsim khoom ntawm ntau yam kev txiav-ntug superior ceev, high-temperature & high-voltage electronic devices xws li Schottky diodes & SBD, high-power switching MOSFETs & JFETs, thiab lwm yam. kuj yog ib qho khoom tsim nyog hauv kev tshawb fawb & kev txhim kho ntawm insulated-gate bipolar transistors thiab thyristors.Raws li cov khoom siv hluav taws xob tshiab zoo tshaj plaws, Silicon Carbide SiC wafer kuj tseem ua haujlwm raws li cov khoom siv hluav taws xob muaj txiaj ntsig hauv cov khoom siv hluav taws xob muaj zog LEDs, lossis ua ib qho chaw ruaj khov thiab nrov substrate rau kev loj hlob GaN txheej hauv kev pom zoo ntawm kev tshawb fawb yav tom ntej.
Technical Specification
Silicon Carbide SiCntawm Western Minmetals (SC) Corporation tuaj yeem muab rau hauv qhov loj ntawm 2 "3" 4" thiab 6 "(50mm, 75mm, 100mm, 150mm) txoj kab uas hla, nrog n-hom, semi-insulating lossis dummy wafer rau kev lag luam thiab kev sim daim ntawv thov .Txhua qhov tshwj xeeb customized yog rau kev daws teeb meem zoo tshaj plaws rau peb cov neeg siv khoom thoob ntiaj teb.
Linear Formula | SiC |
Molecular Luj | 40.1 ib |
Crystal qauv | Wurtzite |
Qhov tshwm sim | Khoom |
Melting Point | 3103 ± 40K |
Boiling Point | N/A |
Qhov ceev ntawm 300K | 3.21 g / cm33 |
Zog Gap | (3.00-3.23) dr hab |
Intrinsic resistivity | > 1E5 Ω-cm |
CAS Nr | 409-21-2 : kuv |
EC Number | 206-991-8 |
Tsis muaj. | Cov khoom | Txheem Specification | |||
1 | SiC Size | 2" | 3" | 4" | 6" |
2 | Txoj kab uas hla mm | 50.8 0.38 Nws | 76.2 0.38 Nws | 100 0.5 | 1500.5 Nws |
3 | Txoj Kev Loj Hlob | MOCVD | MOCVD | MOCVD | MOCVD |
4 | Hom conductivity | 4H-N, 6H-N, 4H-SI, 6H-SI | |||
5 | Resistant Ω-cm | 0.015-0.028;0.02-0.1;> 1E5 | |||
6 | Kev taw qhia | 0 ° ± 0.5 °;4.0 ° rau <1120> | |||
7 | Thickness μm | 330 ± 25 | 330 ± 25 | (350-500) ± 25 | (350-500) ± 25 |
8 | Qhov Chaw Uas Tseem Ceeb | <1-100> ± 5° | <1-100> ± 5° | <1-100> ± 5° | <1-100> ± 5° |
9 | Primary Flat Ntev mm | 16 ± 1.7 | 22.2 ± 3.2 | 32.5 ± 2 | 47.5 ± 2.5 |
10 | Secondary Flat Qhov Chaw | Silicon ntsej muag: 90 °, clockwise los ntawm prime ca ± 5.0 ° | |||
11 | Secondary Flat Ntev mm | 8 ± 1.7 | 11.2 ± 1.5 | 18 ± 2 | 22 ± 2.5 |
12 | TVV max | 15 | 15 | 15 | 15 |
13 | Taub μm max | 40 | 40 | 40 | 40 |
14 | Warp μm max | 60 | 60 | 60 | 60 |
15 | Ntug Exclusion mm max | 1 | 2 | 3 | 3 |
16 | Micropipe ntom cm-2 | <5, kev lag luam;<15, lab;<50, ua | |||
17 | Dislocation cm-2 | <3000, muaj;<20000, lab;<500000, ua tsaug | |||
18 | Nto Roughness nm max | 1 (Polished), 0.5 (CMP) | |||
19 | Kev tawg | Tsis yog, rau qib industrial | |||
20 | Hexagonal phaj | Tsis yog, rau qib industrial | |||
21 | Kos | ≤3mm, tag nrho ntev tsawg dua substrate txoj kab uas hla | |||
22 | Ntug Chips | Tsis yog, rau qib industrial | |||
23 | Ntim | Ib qho wafer ntim ntim rau hauv lub hnab aluminium composite. |
Silicon Carbide SiC 4H / 6Hzoo wafer zoo meej rau kev tsim khoom ntawm ntau yam kev txiav-ntug superior ceev, high-temperature & high-voltage electronic devices xws li Schottky diodes & SBD, high-power switching MOSFETs & JFETs, thiab lwm yam. Nws kuj yog ib qho khoom tsim nyog hauv cov Kev tshawb fawb & kev txhim kho ntawm insulated-gate bipolar transistors thiab thyristors.Raws li cov khoom siv hluav taws xob tshiab zoo tshaj plaws, Silicon Carbide SiC wafer kuj tseem ua haujlwm raws li cov khoom siv hluav taws xob muaj txiaj ntsig hauv cov khoom siv hluav taws xob muaj zog LEDs, lossis ua ib qho chaw ruaj khov thiab nrov substrate rau kev loj hlob GaN txheej hauv kev pom zoo ntawm kev tshawb fawb yav tom ntej.
Cov lus qhia txog kev yuav khoom
Silicon Carbide SiC