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Ib leeg Crystal Silicon Ingot

Kev piav qhia

Ib leeg Crystal Silicon Ingotis feem ntau loj hlob Raws li ib tug loj cylindrical ingot los ntawm qhov tseeb doping thiab rub technologies Czochralski CZ, Sib nqus teb induced Czochralski MCZ thiab Floating Zone FZ txoj kev.CZ txoj kev yog feem ntau siv rau silicon siv lead ua kev loj hlob ntawm loj cylindrical ingots nyob rau hauv diameters txog 300mm siv nyob rau hauv lub electronics kev lag luam los ua semiconductor li.MCZ txoj kev yog ib qho kev hloov pauv ntawm CZ txoj hauv kev uas cov hlau nplaum tsim los ntawm electromagnet, uas tuaj yeem ua tiav cov pa oxygen concentration piv, qis impurity concentration, qis dislocation thiab uniform resistivity variation.FZ txoj kev pab txhawb kev ua tau zoo ntawm kev tiv thaiv siab tshaj 1000 Ω-cm thiab siab-purity crystal nrog cov ntsiab lus oxygen tsawg.

Kev xa khoom

Ib leeg siv lead ua Silicon Ingot CZ, MCZ, FZ lossis FZ NTD nrog n-hom lossis p-hom conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem xa hauv qhov loj ntawm 50mm, 75mm, 100mm, 125mm, 150mm thiab 200mm txoj kab uas hla (2, 3) , 4, 6 thiab 8 nti), orientation <100>, <110>, <111> nrog nto grounded nyob rau hauv pob ntawm lub hnab yas sab hauv nrog thawv thawv sab nraum, los yog raws li customized specification kom ncav cuag lub zoo meej tov.

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Technical Specification

Ib leeg Crystal Silicon Ingot

Ib leeg Crystal Silicon Ingot CZ, MCZ, FZ lossis FZ NTDnrog n-hom lossis p-hom conductivity ntawm Western Minmetals (SC) Corporation tuaj yeem xa tawm hauv qhov loj ntawm 50mm, 75mm, 100mm, 125mm, 150mm thiab 200mm txoj kab uas hla (2, 3, 4, 6 thiab 8 nti), orientation <100 >, <110>, <111> nrog rau saum npoo av hauv pob ntawm lub hnab yas sab hauv nrog lub thawv sab nraud, lossis raws li kev cai tshwj xeeb kom ncav cuag cov tshuaj zoo meej.

Tsis muaj.	Cov khoom	Txheem Specification
1	Loj	2", 3", 4", 5", 6", 8", 9.5", 10", 12 "
2	Txoj kab uas hla mm	50.8-241.3, los yog raws li xav tau
3	Txoj Kev Loj Hlob	CZ, MCZ, FZ, FZ-NTD
4	Hom conductivity	P-hom / Boron doped, N-hom / Phosphide doped lossis Un-doped
5	Ntev mm	≥180 lossis raws li xav tau
6	Kev taw qhia	<100>, <110>, <111>
7	Resistant Ω-cm	Raws li xav tau
8	Cov ntsiab lus carbon a / cm³	≤5E16 lossis raws li xav tau
9	Cov ntsiab lus Oxygen a/cm³	≤1E18 lossis raws li xav tau
10	Hlau Contamination a/cm³	<5E10 (Cu, Cr, Fe, Ni) or <3E10 (Al, Ca, Na, K, Zn)
11	Ntim	Lub hnab yas sab hauv, rooj plaub plywood lossis thawv thawv sab nraum.

Cim	Si
Atomic Number	14
Atomic hnyav	28.09 Nws
Qeb Element	Metalloid
Pawg, Lub Sijhawm, Thaiv	14, 3, ib
Crystal qauv	Pob zeb diamond
Xim	Tsaus grey
Melting Point	1414 ° C, 1687.15 K
Boiling Point	3265 ° C, 3538.15 K
Qhov ceev ntawm 300K	2.329 g / cm3³
Intrinsic resistivity	3.2E5 Ω-cm
CAS Nr	7440-21-3 : kuv
EC Number	231-130-8 : kuv

Ib leeg Crystal Silicon Ingot, thaum loj hlob tiav thiab tsim nyog nws cov resistivity, impurity cov ntsiab lus, siv lead ua zoo tag nrho, qhov loj thiab qhov hnyav, yog siv cov pob zeb diamond log los ua ib lub tog raj kheej zoo meej rau txoj kab uas hla, tom qab ntawd ua tiav cov txheej txheem etching kom tshem tawm cov khoom tsis xws luag sab laug los ntawm kev sib tsoo. .Tom qab ntawd lub cylindrical ingot raug txiav mus rau hauv cov blocks nrog rau qee qhov ntev, thiab muab thais thiab thawj lossis theem nrab tiaj tus los ntawm kev siv lub tshuab wafer tuav kom sib haum xeeb txhawm rau txheeb xyuas cov crystallographic orientation thiab conductivity ua ntej downstream wafer slicing txheej txheem.